Physically-Based Matching Model for Deep-submicron MOS Transistors

This paper presents a new physically-based deepsubmicron MOS transistors matching model that eliminates the large discrepancy between measured matching parameters and the values computed with the existing matching models. Previously neglected effects specific to the deep-submicron MOSFETs with highly doped channel and ultra-thin gate such as channel and gate random dopant fluctuation, gate depletion and quantum mechanical effects in the inversion layer are considered. Analytical expressions that relate the threshold voltage and current factor mismatch coefficients to the process parameters were developed. The proposed matching model was validated through experimental measurements performed on several consecutive deep-submicron technologies: 0.35, 0.25, 0.18, 0.15 , 0.13 and 0.1μm.